產(chǎn)品圖片 |
產(chǎn)品型號(hào) |
描述 |
發(fā)布時(shí)間 |
購(gòu)買 |
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SI7469DP-T1-GE3 |
25mΩ,-80V,-28A,P溝道功率MOSFET |
2024-12-05 |
|
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TZMC20-GS08 |
小信號(hào)齊納二極管,20V 500 mW±5% |
2024-12-05 |
|
|
SQJA86EP-T1_GE3 |
80V,19mΩ,30A,N溝道功率MOSFET |
2024-12-05 |
|
|
SI1024X-T1-GE3 |
雙N溝道20 V(D-S)MOSFET |
2024-12-05 |
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S1MHE3_A/H |
表面貼裝玻璃鈍化整流器1000 V 1A |
2024-12-05 |
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|
VS-16CTU04-M3 |
超快整流器,16A,400V |
2024-12-05 |
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SIP32431DR3-T1GE3 |
帶反向閉鎖的負(fù)載開關(guān) |
2024-12-05 |
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IL300-EF-X009T |
線性光耦合器,高增益穩(wěn)定性,寬帶 |
2024-12-05 |
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WSL12065L000FEA18 |
電源金屬帶?電阻器,5mΩ±1%0.5W |
2024-12-05 |
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|
V15PM153-M3/H |
表面貼裝TMBS?(溝槽MOS勢(shì)壘肖特基)整流器15A, 150V |
2024-12-05 |
|
|
IHLP3232DZER220M11 |
IHLP?商用電感器,22 μh |
2024-12-05 |
|
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T55A475M010C0200 |
聚合物鉭電容器,4.7 μf |
2024-11-21 |
|
|
DG211BDY-T1-E3 |
SPST模擬開關(guān) |
2024-11-21 |
|
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CRCW08055R60FKEAHP |
防脈沖、高功率厚膜片式電阻器,5.6Ω±1%0.5W |
2024-11-21 |
|
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SQJ182EP-T1_GE3 |
80V,5mΩ,210A,N溝道功率MOSFET |
2024-11-06 |
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SQJ479EP-T1_GE3 |
33mΩ,-80V,-32A,P溝道功率MOSFET |
2024-11-06 |
|
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MKP1848550704K2L20 |
薄膜電容器 |
2024-11-06 |
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SQJ872EP-T1_GE3 |
150V,35.5mΩ,24.5A,N溝道功率MOSFET |
2024-11-06 |
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IRFR430ATRPBF |
500V,1.7Ω,5A,N溝道功率MOSFET |
2024-11-06 |
|
|
SE70PJHM3_A/H |
表面貼裝ESD能力整流器 |
2024-11-06 |
|
|
VEMD5160X01 |
硅光電二極管 |
2024-11-06 |
|
|
MOC8104-X019T |
光電晶體管輸出光耦 |
2024-10-14 |
|
|
TX3B226K020C0700 |
22uf Bcase 20V電容 |
2024-10-14 |
|
|
MMA02040Z0000ZB300 |
專業(yè)薄膜MELF電阻器,0Ω,跳接器 |
2024-10-14 |
|
|
CNY17-3 |
光電晶體管輸出光耦 |
2024-10-14 |
|
|
SIC448ED-T1-GE3 |
4.5 V至45 V輸入,6 A,microBUCKDC/DC轉(zhuǎn)換器 |
2024-10-14 |
|
|
SUD15N15-95-E3 |
150V,95mΩ,15A,N溝道功率MOSFET |
2024-10-14 |
|
|
NTCLE301E4C90867 |
NTC熱敏電阻 |
2024-10-14 |
|
|
SIR610DP-T1-RE3 |
200V,31.9mΩ,35.4A,N溝道功率MOSFET |
2024-09-10 |
|
|
TSOP75456WTT |
用于遠(yuǎn)程控制系統(tǒng)的IR接收模塊 |
2024-09-10 |
|
|
IHLP2525CZER2R2M11 |
IHLP?商用電感器,2.2 μH,低DCR系列 |
2024-09-10 |
|
|
BU25H08-E3/P |
橋式整流器 單相 |
2024-09-10 |
|
|
V8P22HM3_A/H |
高電流密度表面安裝TMBS?(溝槽MOS勢(shì)壘肖特基)整流器 |
2024-08-13 |
|
|
VCNT2025X01 |
具有晶體管輸出的反射式光學(xué)傳感器 |
2024-07-18 |
|
|
TCPT1350X01 |
具有晶體管輸出的超小型透射式光學(xué)傳感器,開槽 |
2024-07-18 |
|
|
SISS42LDN-T1-GE3 |
100V,14.9mΩ,11.3A,N溝道功率MOSFET |
2024-07-18 |
|
|
TX3B336K020C1000 |
鉭電容器,33μF |
2024-07-18 |
|
|
IRF644STRRPBF |
250V,280mΩ,14A,N溝道功率MOSFET |
2024-06-28 |
|
|
SI4816BDY-T1-GE3 |
30V,5.8A,8.2A,帶肖特基二極管雙N溝道MOSFET |
2024-06-28 |
|
|
VEML6030 |
具有I2C接口的高精度環(huán)境光傳感器 |
2024-06-28 |
|
|
VS-20ETS08-M3 |
高壓,輸入整流二極管,20 A,800V |
2024-06-28 |
|
|
TNPW0603100KBEEA |
薄膜芯片電阻 100 kΩ ±0.1% 0.1W |
2024-06-28 |
|
|
WSLP5931L1000FEA |
電流傳感電阻器 |
2024-06-28 |
|
|
TNPW06032K70BEEA |
芯片電阻,2.7 kΩ ±0.1% 0.1W |
2024-06-28 |
|
|
SQA403EJ-T1_GE3 |
20mΩ,-30V,-10A,P溝道功率MOSFET |
2024-06-28 |
|
|
SQD50P04-09L_GE3 |
9.4mΩ,-40V,-50A,P溝道MOSFET |
2024-06-28 |
|
|
SI7431DP-T1-GE3 |
-200V,-3.8A,P溝道MOSFET |
2024-06-19 |
|
|
ESH2DHE3_A/H |
表面貼裝超快塑料整流器 |
2024-06-19 |
|
|
SI7463ADP-T1-GE3 |
10mΩ,-40V,-46A,P溝道功率MOSFET |
2024-06-19 |
|
|
SIHB22N60ET1-GE3 |
600V,180mΩ,21A,N溝道功率MOSFET |
2024-06-04 |
|
|
BAV19W-HE3-08 |
小信號(hào)開關(guān)二極管,高壓 |
2024-06-04 |
|
|
SQ3418EV-T1_GE3 |
40V,32mΩ,8A,N溝道MOSFET |
2024-06-04 |
|
|
SMCJ15CA-E3/57T |
表面貼裝TRANSZORB瞬態(tài)電壓抑制器 |
2024-05-07 |
|
|
BAS20-HE3-18 |
小信號(hào)開關(guān)二極管,高壓,150 V 200mA |
2024-05-07 |
|
|
BAT54WS-E3-08 |
小信號(hào)肖特基二極管30 V 200mA |
2024-05-07 |
|
|
SMA6J7.5A-E3/5A |
表面安裝TRANSZORB?瞬態(tài)電壓抑制器,600W,7.5V 5%,UNIDIR,SMA |
2024-05-07 |
|
|
AS3BDHM3_A/H |
表面安裝整流器3A, 200V, SM |
2024-05-07 |
|
|
VSMY2943SL |
940nm高速紅外發(fā)射二極管,表面發(fā)射器技術(shù) |
2024-05-07 |
|
|
VS-20CDH02HM3/I |
Hyperfast整流器,2 x 10 A FRED Pt? |
2024-04-12 |
|
|
S2JHE3_A/H |
表面安裝玻璃鈍化整流器,1.5A, 600V, SMB |
2024-04-12 |
|
|
MAL214699806E3 |
100 μF鋁電解電容器 徑向 |
2024-04-12 |
|
|
IRFPG50PBF |
N-溝道 MOSFET |
2024-04-12 |
|
|
VY1222M47Y5UQ6TV0 |
安全電容器 2200pF X760 Y500VAC 20% Y5U |
2024-04-12 |
|
|
595D107X0016D2T |
鉭電容器100 μF |
2024-04-12 |
|
|
IRFB18N50KPBF |
500V,290mΩ,17A,N溝道功率MOSFET |
2024-03-15 |
|
|
SI2356DS-T1-GE3 |
40V,51mΩ,4.3A,N 溝道功率 MOSFET |
2024-03-15 |
|
|
SQJA06EP-T1_GE3 |
60V,8.7mΩ,57A,N溝道功率MOSFET |
2024-03-15 |
|
|
TZMC5V1-GS08 |
齊納二極管 |
2024-03-15 |
|
|
SIHG018N60E-GE3 |
600V,23mΩ,99A,N溝道功率MOSFET |
2024-03-15 |
|
|
MURS340-M3/9AT |
表面貼裝超快塑料整流器 |
2024-02-29 |
|
|
MURS360-M3/9AT |
表面貼裝超快塑料整流器 |
2024-02-29 |
|
|
WSKW06122L000FEA |
芯片電阻,2 mΩ ±1% 1W |
2024-02-29 |
|
|
WSLP2010R0100FEA |
Power Metal Strip?電阻器,10mΩ±1%2W |
2024-02-29 |
|
|
VS-20MQ100NTRPBF |
肖特基二極管 100 V 2.1A |
2024-02-29 |
|
|
TNPW06036K80BEEA |
薄膜芯片電阻 6.8 kΩ ±0.1% 0.1W |
2024-02-29 |
|
|
595D107X0010D2T |
固體鉭片電容器,100 μf,涂層 |
2024-02-29 |
|
|
SIHP18N50C-E3 |
500V,270mΩ,18A,N溝道功率MOSFET |
2024-02-29 |
|
|
TZMC43-GS08 |
齊納二極管 |
2024-02-29 |
|
|
NTCALUG01A473HA |
NTC 熱敏電阻器 47kΩ 環(huán)形焊片 |
2024-02-29 |
|
|
BFC233810154 |
0.15 μF干擾抑制薄膜電容器-X1級(jí)徑向MKP 440 VAC-標(biāo)準(zhǔn)跨線 |
2024-02-29 |
|
|
MKT1820610015 |
10μF 薄膜電容器 |
2024-02-29 |
|
|
VO14642AT |
固態(tài)繼電器 |
2023-12-27 |
|
|
IRFU320PBF |
400V,1.8Ω,3.1A,N溝道功率MOSFET |
2023-12-27 |
|
|
IRFP460HPBF |
500V,270mΩ,20A,N溝道功率MOSFET |
2023-12-27 |
|
|
IRFP450APBF |
500V,400mΩ,14A,N溝道功率MOSFET |
2023-12-27 |
|
|
IRF840ALPBF |
500V,850mΩ,8A,N溝道功率MOSFET |
2023-12-27 |
|
|
IRFB9N60APBF |
600V,750mΩ,9.2A,N溝道功率MOSFET |
2023-12-27 |
|
|
IRFPE50PBF |
800V,1.2Ω,7.8A,N溝道功率MOSFET |
2023-12-27 |
|
|
IRFBE30SPBF |
800V,3Ω,4.1A,N溝道功率MOSFET |
2023-12-27 |
|
|
IRFU120PBF |
250V,2Ω,2.2A,N溝道功率MOSFET |
2023-12-13 |
|
|
SQJ459EP-T1_GE3 |
18mΩ,-60V,-52A,P 溝道功率 MOSFET |
2023-11-28 |
|
|
SUD19N20-90-E3 |
200V,90mΩ,19A,N溝道功率MOSFET |
2023-11-28 |
|
|
SI2377EDS-T1-GE3 |
61mΩ,-20V,-4.4A,P溝道功率MOSFET |
2023-11-14 |
|
|
BZD27C24P-HE3-08 |
齊納二極管 |
2023-11-14 |
|
|
RS1KHE3_A/H |
表面安裝快速開關(guān)整流器 |
2023-11-06 |
|
|
IRFL210TRPBF |
200V,1.5Ω,0.96A,N溝道功率MOSFET |
2023-11-06 |
|
|
T51D107M010C0040 |
表面安裝芯片電容器 |
2023-11-06 |
|
|
T51D107M016C0050 |
vPolyTanTM聚合物表面安裝芯片電容器 |
2023-11-06 |
|
|
T51D227M010C0040 |
vPolyTanTM聚合物表面安裝芯片電容器 |
2023-11-06 |
|
|
T51D227M6R3C0040 |
表面安裝芯片電容器 |
2023-11-06 |
|
|
T51D337M004C0040 |
表面安裝芯片電容器 |
2023-11-06 |
|
|
T51D476M025C0060 |
vPolyTanTM聚合物表面安裝芯片電容器 |
2023-11-06 |
|
|
1.5SMC220A-E3/9AT |
TVS二極管 表面貼裝型 |
2023-10-20 |
|
|
MURS120-E3/52T |
超快整流器,表面貼裝,200V,1A |
2023-10-11 |
|
|
VS-RA220FA120 |
標(biāo)準(zhǔn)整流器,220 A |
2023-09-27 |
|
|
V20PWM60C-M3/I |
肖特基二極管,60 V 10A |
2023-09-06 |
|
|
SUM55P06-19L-E3 |
19mΩ,-60V,-55A,P溝道功率MOSFET |
2023-09-06 |
|
|
SI5403DC-T1-GE3 |
30mΩ,-30V,-6A,P溝道功率MOSFET |
2023-09-06 |
|
|
NTCALUG01A103F161A |
NTC熱敏電阻器 10k |
2023-09-06 |
|
|
SML4738A-E3/61 |
表面安裝齊納二極管 |
2023-09-06 |
|
|
SI7415DN-T1-GE3 |
65mΩ,-60V,-15A,P溝道功率MOSFET |
2023-09-06 |
|
|
SIS862ADN-T1-GE3 |
60V,7.2mΩ,52A,N 溝道功率 MOSFET |
2023-07-18 |
|
|
NTCS0805E3473JHT |
NTC 熱敏電阻器 47kΩ |
2023-07-18 |
|
|
AY2101K29Y5SS63L7 |
陶瓷電容器 Y5S,圓片式100 pF ±10% 440VAC |
2023-07-18 |
|
|
SUM110P06-07L-E3 |
6.9mΩ,-60V,-110A,P溝道功率MOSFET |
2023-06-28 |
|
|
1.5SMC30CAHE3_A/H |
表面貼裝 TRANSZORB 瞬態(tài)電壓抑制器 |
2023-06-28 |
|
|
SQJ147ELP-T1_GE3 |
12.5mΩ,-40V,-90A,P溝道功率MOSFET |
2023-06-28 |
|
|
293D226X0035E2TE3 |
固體鉭電容器 |
2023-06-28 |
|
|
SQ7414CENW-T1_GE3 |
60V,23mΩ,18A,N溝道功率MOSFET |
2023-06-28 |
|
|
SQ2318AES-T1_GE3 |
40V,31mΩ,8A,N溝道功率MOSFET |
2023-06-28 |
|
|
WSL0805R0100DEA18 |
片式電阻器,10 mΩ±0.5%0.25W |
2023-06-28 |
|
|
SiC467ED-T1-GE3 |
降壓開關(guān)穩(wěn)壓器 |
2023-05-24 |
|
|
IHLP2525CZER1R0M01 |
1uH,±20%,高電流IHLP電感器 |
2023-05-06 |
|
|
VB30200C-E3/8W |
肖特基整流器,200V,30A |
2023-05-06 |
|
|
P4SMA12A-E3/61 |
表面貼裝TRANSZORB瞬態(tài)電壓抑制器 |
2023-05-06 |
|
|
SI7489DP-T1-GE3 |
41mΩ,-100V,-28A,P溝道功率MOSFET |
2023-05-06 |
|
|
MURS120HE3_A/H |
超快整流器,表面貼裝,200V,1A |
2023-04-20 |
|
|
WSR3R0150FEA |
電流傳感電阻器 - SMD 3w,15mΩ,1% |
2023-04-20 |
|
|
SFH615A-3X009 |
晶體管輸出光電耦合器 |
2023-04-20 |
|
|
BZG05C3V3-HM3-08 |
齊納二極管,3.3 V 1.25 W |
2023-04-20 |
|
|
CRCW040210R5FKED |
標(biāo)準(zhǔn)厚膜片式電阻器,10.5Ω±1%0.063W |
2023-04-20 |
|
|
VO615A-9 |
光電晶體管輸出光耦合器,耐高溫 |
2023-04-20 |
|
|
VO615A-3X007T |
光電晶體管輸出光耦 |
2023-04-20 |
|
|
DG468DV-T1-E3 |
低功耗、高電壓 SPST 模擬開關(guān) |
2023-04-20 |
|
|
CRCW04021M60JNED |
標(biāo)準(zhǔn)厚膜片式電阻器 |
2023-03-21 |
|
|
CRCW06034R70FKEA |
標(biāo)準(zhǔn)厚膜片式電阻器,4.7Ω±1%0.1W |
2023-03-21 |
|
|
ZM4752A-GS08 |
33V,±5%,1W,齊納二極管 |
2023-03-21 |
|
|
IHLP2525CZER1R0M01 |
1uH,±20%,高電流IHLP電感器 |
2023-03-21 |
|
|
SQ2315ES-T1_GE3 |
50mΩ,-12V,-5A,P 溝道功率 MOSFET |
2023-03-09 |
|
|
PR02000201503JA100 |
功率金屬膜引線電阻器 |
2023-03-09 |
|
|
WSL10203L000FEA |
片式電阻器,3 mΩ±1%2W |
2023-03-09 |
|
|
CRCW020147K0FKED |
厚膜片式電阻器,47kΩ,±1%,0.05W |
2023-03-09 |
|
|
CRCW04029K09FKED |
標(biāo)準(zhǔn)厚膜片式電阻器,9.09 kΩ±1%0.063W |
2023-03-09 |
|
|
MSX1PBHM3/89A |
表面貼裝ESD整流器 |
2023-02-14 |
|
|
BZX384B16-E3-08 |
齊納二極管 |
2023-02-14 |
|
|
MBR30H60CT-E3/45 |
肖特基二極管60 V 15A |
2023-02-14 |
|
|
P6SMB160A-E3/52 |
表面貼裝 TRANSZORB 瞬態(tài)電壓抑制器 |
2022-12-28 |
|
|
CRCW02014K70FKED |
厚膜電阻器,SMD,50mW, 4.7Kohms,1%,100ppm |
2022-12-06 |
|
|
CRCW02010000Z0ED |
厚膜電阻器,SMD |
2022-12-06 |
|
|
VY1222M43Y5UC6UV0 |
陶瓷電容器 Y5U,2200 pF ±20% 760VAC |
2022-11-16 |
|
|
MKP1848510924K2L20 |
金屬化聚丙烯薄膜電容器 DC-Link 電容器 |
2022-11-16 |
|
|
293D476X0020E2TE3 |
固體鉭電容器 |
2022-11-16 |
|
|
1N4006-E3/54 |
通用塑料整流器,800 V 1A |
2022-11-16 |
|
|
VS-30ETH06-M3 |
超快整流器,600 V 30A |
2022-11-16 |
|
|
T55D227M010C0007 |
220uF,10V,±20%,鉭質(zhì)電容器-固體 |
2019-05-16 |
|
|
T55V157M6R3C0018 |
150uF,3.6V,±20%,鉭質(zhì)電容器-固體 |
2019-05-16 |
|
|
P6SMB30AHE3/52 |
峰值功率600W,30V,單向通道,齊納TVS |
2018-12-14 |
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