Vishay 650V Silicon Carbide (SiC) Schottky Diodes
The Silicon Carbide (SIC) Schottky Diodes of Vishay semiconductors adopts advanced merged PIN Schottky (MPS) structure. Excellent surge capability and low voltage drop at high current peaks and low positive forward voltage temperature coefficient for high efficiency and easy paralleling. Low junction capacitance for low switching losses in active devices and Low and stable leakage with temperature.
Package
Features
Majority carrier diode using Schottky technology on SiC wide band gap material
Positive VF temperature coefficient for easy paralleling
Virtually no recovery tail and no switching losses
Temperature invariant switching behavior
175°C maximum operating junction temperature
MPS structure for high ruggedness to forward current surge events
Meets JESD 201 class 1A whisker test
Solder bath temperature 275°C maximum, 10s per JESD 22-B106
Applications
PFC and high frequency rectification in high voltage power supplies and LLC
converters for servers
telecom equipment
UPS
solar inverters
Ordering Info
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Product ordering：Mr. Wang Email：wangwh@icchain.com |