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ST?Gen3?SiC MOSFET
 
 
With an extended voltage range, from 650 to 2200 V, ST's silicon carbide MOSFETs offer one of the most advanced technology platforms featuring excellent switching performance combined with very low on-state resistance per area. This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.The third-generation silicon carbide MOSFET can even be driven at 15V Vgs.
 
Package
 
Features
Automotive-grade (AG) qualified devices
Very high temperature handling capability (max. TJ = 200 °C)
Very high switching frequency operation and very low switching losses
Low on-state resistance
Gate drive compatible with existing ICs
Very fast and robust intrinsic body diode
 
Applications
Automotive
Photovoltaic
Energy storage
Charging station
 
Ordering Info
Part# Manufacturer Package/Temperature(℃) Description Datasheet
SCT015W120G3-4AG STMicroelectronics HiP247-4/-55~200 Automotive-grade silicon carbide Power MOSFET 1200V
SCT020H120G3AG STMicroelectronics H2PAK-7/-55~175 Automotive-grade silicon carbide Power MOSFET 1200V
SCT025H120G3AG STMicroelectronics H2PAK-7/-55~175 Automotive-grade silicon carbide Power MOSFET 1200V
SCT025W120G3-4AG STMicroelectronics HiP247-4/-55~200 Automotive-grade silicon carbide Power MOSFET 1200V
SCT040H120G3AG STMicroelectronics H2PAK-7/-55~175 Automotive-grade silicon carbide Power MOSFET 1200V
SCT040W120G3-4AG STMicroelectronics HiP247-4/-55~200 Automotive-grade silicon carbide Power MOSFET 1200V
SCT040W120G3AG STMicroelectronics HiP247-3/-55~200 Automotive-grade silicon carbide Power MOSFET 1200V
SCT070H120G3AG STMicroelectronics H2PAK-7/-55~175 Automotive-grade silicon carbide Power MOSFET 1200V
SCT070HU120G3AG STMicroelectronics HU3PAK-7/-55~175 Automotive-grade silicon carbide Power MOSFET 1200V
SCT070W120G3-4AG STMicroelectronics HiP247-4/-55~200 Automotive-grade silicon carbide Power MOSFET 1200V
SCT070W120G3AG STMicroelectronics HiP247-3/-55~200 Automotive-grade silicon carbide Power MOSFET 1200V
 
☆  Product ordering: Mr. Mao    Email: Leo.Mao@icchain.com
   
 
 
   
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